Description
General description
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm². The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.
Device configuration:
This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Application
Graphene device research
FET based sensor research for active materials deposited on graphene
Chemical sensors
Biosensors
Bioelectronics
Magnetic sensors
Photodetectors
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.
Features and Benefits
Device Features:
State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
Devices are not encapsulated and can be functionalized by additives
Perfect platform for sensor research and development
36 individual graphene FETs per chip
Mobilities typically > 1000 cm2/V·s
Disclaimer
Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
Be careful when handling the graphene FET chip.
Tweezers should not contact the device area directly.
