Description
Unit Size: Each
Key Features
• Leading edge transistor probingnProber IV SteadFast Nanomanipulators and temperature-controlled probing environment combine to give the probe the necessary stability for working with leading-edge transistors.
• High-resolution imaging of sensitive samplesThe new LEEN2 Column of the nProber IV System enables low eV imaging and probing operation and includes an advanced control system that reduces sample dose by up to 30%. These advances allow the nProber IV System to provide accurate measurements of critical transistor parameters with minimal shifts from SEM imaging.
• Guided operation and automationThe nProber IV System is equipped with eFast semi-automated guided workflows that take you through system operation from sample loading to electrical characterization. eFast Software automates the setup of the LEEN2 Column and controls key sub-systems ensuring consistent results in a multi-user production environment.
• 3D structuresThe nProber IV Systems can be equipped with EBIRCH2 and EBAC to find critical faults in 3D interconnect structures down to ∼100 Ω. EBIRCH2 can also be used to localize critical defects in FinFET transistors. In addition, the nProber IV System can be equipped with a sub-stage that enables probes to be separated by many millimeters, essential for the isolation of faults in large 3D NAND structures.
• Resistive gate faultsThe nProber IV Systems can isolate resistive gate faults utilizing high-speed pulsed probing with rise times of less than 1 ns.
• AutomationOur easyProbe Software automates key steps in the nProber IV workflow including: cleaning the probes, lowering the probes to the sample, and optimizing the electrical contact between the probes and the sample. easyProbe Software significantly reduces the training required to use the nProber IV System and allows for extended periods of unattended operation.
• Automotive reliabilityThe optional Thermal Characterization Package supports the most recent automotive reliability standards. Samples temperatures can be controlled from -40°C to 150°C in order to isolate faults that are not detectable at ambient temperatures.
